| 摘要 |
A nonvolatile memory device includes a plurality of gate structures, each gate structure formed over a substrate and including a tunnel insulating layer, a floating gate, an inter-gate dielectric layer, and a control gate, which are sequentially stacked, and an interlayer dielectric layer covering the plurality of gate structures and having an air gap formed between adjacent gate structures, wherein the bottom surface of the air gap is positioned at a lower level than the surface of the tunnel insulating layer. |
