| 摘要 |
The present invention provides a semiconductor device including a buried gate and a method for fabricating the same, in which the width of a contact plug may not exceed a predetermined width. The method including forming a plurality of trenches over a substrate using the mask pattern, forming a gate insulating film in each of the plurality of trenches, forming a plurality of gate electrodes filling portions of the plurality of trenches, removing an exposed gate insulating film formed over each of the plurality of gate electrodes in each of the plurality of the trenches, forming a plurality of sealing films filling remaining portions of the plurality of trenches, and forming a plurality of contact plugs over the substrate between the trenches. |
