| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure of a semiconductor device for achieving reduced power consumption as well as improvement in yield and reliability, even when a screen is increased, and a method for manufacturing the structure of a semiconductor device.SOLUTION: A pixel thin film transistor used in a screen is manufactured using a reverse stagger type thin film transistor. In the reverse stagger type thin film transistor, a source wiring 311 and a gate electrode are formed on the same plane. A metal wiring 303 connecting the source wiring 311 and the reverse stagger type thin film transistor and a metal wiring 305 connecting a pixel electrode 309 and the reverse stagger type thin film transistor are formed in the same process. |
