METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with improved reliability in which a defect caused by an end portion of a semiconductor layer provided in an island shape is prevented, and a method for manufacturing the semiconductor device.SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: forming an island-shaped semiconductor layer on a substrate having an insulating surface; subjecting a first alteration processing; forming a first insulating film on a surface of the island-shaped semiconductor layer; removing the first insulating film; subjecting a second alteration processing to the island-shaped semiconductor layer from which the first insulating film is removed; forming a second insulating film on the surface of the island-shaped semiconductor layer; and forming a conductive layer on the second insulating film. An upper end portion of the island-shaped semiconductor layer is rounded by the first alteration processing and the second alteration processing.