| 发明名称 |
ELECTROSTATIC DISCHARGE (ESD) DEVICE AND METHOD OF FABRICATING |
| 摘要 |
A structure and method of fabricating electrostatic discharge (EDS) circuitry in an integrated circuit chip by integrating a lateral bipolar, either a p-n-p with a NMOSFET or a n-p-n with a PMOSFET within a triple well. The lateral bipolar preferably includes diodes at the I/O and/or the VDDs of the circuitry. |
| 申请公布号 |
US2014061803(A1) |
申请公布日期 |
2014.03.06 |
| 申请号 |
US201314073119 |
申请日期 |
2013.11.06 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG SHUNHUA;CHATTY KIRAN V.;GAUTHIER, JR. ROBERT J.;MUHAMMAD MUJAHID |
| 分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
