发明名称 |
Drain Extended CMOS with Counter-Doped Drain Extension |
摘要 |
An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region. |
申请公布号 |
US2014061785(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201314073530 |
申请日期 |
2013.11.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
STEINMANN PHILIPP;CHATTERJEE AMITAVA;PENDHARKAR SAMEER |
分类号 |
H01L29/08;H01L29/78 |
主分类号 |
H01L29/08 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|