发明名称 SEMICONDUCTOR DEVICE
摘要 A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m-1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m-1)-th scan line.
申请公布号 US2014061636(A1) 申请公布日期 2014.03.06
申请号 US201314010841 申请日期 2013.08.27
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAKE HIROYUKI;YAMAZAKI SHUNPEI
分类号 H01L27/12 主分类号 H01L27/12
代理机构 代理人
主权项
地址