发明名称 GAS INJECTOR FOR HIGH VOLUME, LOW COST SYSTEM FOR EPITAXIAL SILICON DEPOSITON
摘要 Apparatus for use in a substrate processing chamber are provided herein. In some embodiments, a gas injector for use in a process chamber may include first set of gas orifices configured to provide a jet flow of a first process gas into the process chamber, and a second set of gas orifices configured to provide a laminar flow of a second process gas into the process chamber, wherein the first set of gas orifices are disposed between at least two gas orifices of the second set of gas orifices.
申请公布号 US2014060434(A1) 申请公布日期 2014.03.06
申请号 US201213721323 申请日期 2012.12.20
申请人 APPLIED MATERIALS, INC. 发明人 CARLSON DAVID K.;RICE MICHAEL R.;SHAH KARTIK B.;MAQSOOD KASHIF;NARWANKAR PRAVIN K.
分类号 C30B25/14;B05B1/00 主分类号 C30B25/14
代理机构 代理人
主权项
地址