BACK CONTACT PASTE WITH Te ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES

摘要

Methods for forming a back contact on a thin film photovoltaic device are provided. The method can include: applying a conductive paste onto a surface defined by a p-type absorber layer (of cadmium telluride) of a p-n junction; and, curing the conductive paste to form a conductive coating on the surface such that during curing an acid from the conductive paste reacts to enrich the surface with tellurium but is substantially consumed during curing. The conductive paste can comprises a conductive material, an optional solvent system, and a binder. Thin film photovoltaic devices are also provided, such as those that have a conductive coating that is substantially free from an acid.