Semiconductor device equipped in sensor module e.g. differential pressure sensor integrated in diesel particulate filter, has separate metallization portions which are formed on contact surface of doped contact region

摘要

The semiconductor device has a substrate (10) having a doped contact region (12). A spacer (14) which is electrically connected to the doped contact region is formed on the substrate. A diffusion barrier (16) is formed between the spacer and the doped contact region. The metallic materials are applied on the contact surface (18) of the doped contact region. The separate metallization portions (22) are formed on the contact surface of the doped contact region. The metallic materials include titanium, tantalum, platinum, chromium or aluminum. An independent claim is included for a method for manufacturing semiconductor device.