发明名称 |
Transistors, Semiconductor Devices, and Methods of Manufacture Thereof |
摘要 |
Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor over a workpiece. The transistor includes a sacrificial gate material comprising a group III-V material. The method includes combining a metal (Me) with the group III-V material of the sacrificial gate material to form a gate of the transistor comprising a Me-III-V compound material. |
申请公布号 |
US2014061722(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213604510 |
申请日期 |
2012.09.05 |
申请人 |
DOORNBOS GERBEN;OXLAND RICHARD;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
DOORNBOS GERBEN;OXLAND RICHARD |
分类号 |
H01L29/812;H01L21/338 |
主分类号 |
H01L29/812 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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