发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A nitride semiconductor device includes a dislocation control layer on a substrate, and a nitride semiconductor layer on the dislocation control layer. The dislocation control layer includes a nanocomposite of a first nanoparticle made of a first material and at least one second nanoparticle made of a second material. |
申请公布号 |
US2014061587(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201313771411 |
申请日期 |
2013.02.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE MOON-SANG;PARK SUNG-SOO;YOON DAE-HO |
分类号 |
H01L29/06;H01L29/12 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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