发明名称 ADJUSTABLE PROCESS SPACING, CENTERING, AND IMPROVED GAS CONDUCTANCE
摘要 Embodiments of the invention generally provide a process kit for use in a physical deposition chamber (PVD) chamber. In one embodiment, the process kit provides adjustable process spacing, centering between the cover ring and the shield, and controlled gas flow between the cover ring and the shield contributing to uniform gas distribution, which promotes greater process uniformity and repeatability along with longer chamber component service life.
申请公布号 US2014061040(A1) 申请公布日期 2014.03.06
申请号 US201314042177 申请日期 2013.09.30
申请人 APPLIED MATERIALS, INC. 发明人 HAWRYLCHAK LARA;SAVANDAIAH KIRANKUMAR
分类号 C23C14/34 主分类号 C23C14/34
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