发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device includes a semiconductor substrate including a first region and a second region, a first high-k dielectric film pattern on the first region, a second high-k dielectric film pattern on the second region and having the same thickness as the first high-k dielectric film pattern. First and second work function control film patterns are positioned on the high-k dielectric film patterns of the first region. Third and fourth work function control patterns are positioned on the high-k dielectric film pattern of the second region, the first work function control pattern being thicker than the third work function control pattern and the fourth work function control pattern being thicker than the second. |
申请公布号 |
US2014061813(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201313902099 |
申请日期 |
2013.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YU CHEONG-SIK;BAE CHOEL-HWYI;KIM JU-YOUN;HONG CHANG-MIN |
分类号 |
H01L27/11 |
主分类号 |
H01L27/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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