METHOD FOR PREPARING ULTRATHIN ON-INSULATOR MATERIAL USING ADSORPTION OF DOPED ULTRATHIN LAYER

摘要

Provided is a method for preparing an ultrathin on-insulator material using the adsorption of a doped ultrathin layer. The method comprises: firstly, epitaxially growing on a first substrate (1) an ultrathin doped single-crystal thin film (2) and an ultrathin top-layer thin film (3) in sequence, and preparing a high-quality ultrathin on-insulator material through ion implantation and bonding processes, the prepared ultrathin on-insulator material having the thickness range of 5-50 nm. A microcrack is formed using the adsorption of the ultrathin doped single-crystal thin film (2) for ions implanted thereunder, so as to strip same, and the surface roughness of the stripped on-insulator material is small. In addition, foreign atoms enhance the adsorption capability of the ultrathin single-crystal thin film (2) for ions, so as to reduce the ion implantation dose and the annealing temperature in the preparation process, thereby effectively reducing the damage of implantation in the top-layer thin film (3) and achieving the purposes of improving the production efficiency and reducing the production costs.