BACK CONTACT STRUCTURE FOR PHOTOVOLTAIC DEVICES SUCH AS COPPER-INDIUM-DISELENIDE SOLAR CELLS

摘要

A back contact configuration for a CIGS-type photovoltaic device is provided. According to certain examples, the back contact configuration includes an optical matching layer and/or portion of or including MoSe2 having a thickness substantially corresponding to maxima of absorption of reflected light in CIGS- type absorbers used in certain photovoltaic devices. Certain example methods for making the back contact configuration wherein a thickness of the MoSe2 layer and/or portion can be controlled to be within thickness ranges that correspond to maxima of CIGS light absorption for reflected solar light are also provided.