发明名称 METHOD FOR MANUFACTURING CONDUCTOR AND SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a sintering method capable of sintering nano particles even at an ambient temperature of -50 to-100°C under atmospheric pressure.SOLUTION: The sintering method comprises: forming a wiring pattern layer on a surface of an insulating substrate using a liquid or pasty ink including conductor or semiconductor nano particles wrapped with an organic capsule having a layer thickness of 1-5 nm; dissolving and removing the capsule layer by applying voltage to the nano particle containing formation layer; forming a sintered layer by sintering between the nano particles; and forming a wiring of the sintered layer having electrical conductivity on a circuit board.
申请公布号 JP2014040661(A) 申请公布日期 2014.03.06
申请号 JP20130166793 申请日期 2013.08.09
申请人 VALTION TEKNILLINEN TUTKIMUSKESKUS 发明人 HEIKKI SEPPAE;MARK ALLEN
分类号 B22F3/10;B22F7/04;H01B1/20;H05K1/09;H05K3/10 主分类号 B22F3/10
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