发明名称 |
METHOD FOR MANUFACTURING CONDUCTOR AND SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To provide a sintering method capable of sintering nano particles even at an ambient temperature of -50 to-100°C under atmospheric pressure.SOLUTION: The sintering method comprises: forming a wiring pattern layer on a surface of an insulating substrate using a liquid or pasty ink including conductor or semiconductor nano particles wrapped with an organic capsule having a layer thickness of 1-5 nm; dissolving and removing the capsule layer by applying voltage to the nano particle containing formation layer; forming a sintered layer by sintering between the nano particles; and forming a wiring of the sintered layer having electrical conductivity on a circuit board. |
申请公布号 |
JP2014040661(A) |
申请公布日期 |
2014.03.06 |
申请号 |
JP20130166793 |
申请日期 |
2013.08.09 |
申请人 |
VALTION TEKNILLINEN TUTKIMUSKESKUS |
发明人 |
HEIKKI SEPPAE;MARK ALLEN |
分类号 |
B22F3/10;B22F7/04;H01B1/20;H05K1/09;H05K3/10 |
主分类号 |
B22F3/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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