| 摘要 |
PROBLEM TO BE SOLVED: To realize an AlGaInN semiconductor wafer having superior surface quality at its Ga-side, and to provide a method of manufacturing such a wafer.SOLUTION: Provided is a high quality wafer containing AlGaInN (where 0<y≤1 and x+y+z=1) characterized by a root mean square of surface roughness of less than 1 nm in a 10×10 μmarea at its Ga-side. Such a wafer is chemically-mechanically polished (CMP) at its Ga-side, by using a CMP slurry containing abrasive particles, such as silica or alumina, and an acid or a base. The method of manufacturing such a high quality AlGaInN wafer may include steps of lapping, mechanical polishing, and reducing internal stress of the wafer by thermal annealing or chemical etching for further enhancement of its surface quality. The CMP method is usefully employed to emphasize crystal defects on the Ga-side of the AlGaInN wafer. |
