METHOD FOR PRODUCING SILICON CARBIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide substrate, which can suppress occurrence of a discharge during crystal growth and produce a silicon carbide crystal with little dislocation.SOLUTION: The method for producing a silicon carbide substrate comprises following steps. A growth vessel 10 in which a silicon carbide raw material 8 and a seed substrate 1 are disposed is provided. A temperature of the growth vessel 10 is raised to a temperature within a range of growth temperature of a silicon carbide crystal by means of a resistance heater 5. The temperature of the growth vessel 10 is kept within the range of the growth temperature of the silicon carbide crystal to grow the silicon carbide crystal on the seed substrate 1. A pressure in the step for raising the temperature of the growth vessel is higher than that in the step for growing the silicon carbide crystal. In the step for raising the temperature of the growth vessel, the growth vessel 10 contains a gas consisting of an element having the atomic number larger than that of helium. The concentration of helium in the step for raising the temperature of the growth vessel is lower than the concentration of helium in the step for growing the silicon carbide crystal.