| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with an improved integration degree.SOLUTION: A semiconductor device includes: a first memory cell that includes a first transistor, a second transistor, and a first capacitance; and a second memory cell that includes a third transistor, a fourth transistor, and a second capacitance. One of source or drain of the first to fourth transistors is electrically connected to a bit line. A contact between the bit line and the plurality of memory cells is shared so that an integration degree is improved. |
