发明名称 |
THREE DIMENSIONAL MEMORY ARRAY ARCHITECTURE |
摘要 |
Three dimensional memory array architectures and methods of forming the same are provided. An example memory array can include a stack comprising a plurality of first conductive lines at a number of levels separated from one another by at least an insulation material, and at least one conductive extension arranged to extend substantially perpendicular to the plurality of first conductive lines. Storage element material is formed around the at least one conductive extension. Cell select material is formed around the at least one conductive extension. The at least one conductive extension, storage element material, and cell select material are located between co-planar pairs of the plurality of first conductive lines. |
申请公布号 |
US2014061575(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213600777 |
申请日期 |
2012.08.31 |
申请人 |
PIO FEDERICO;MICRON TECHNOLOGY, INC. |
发明人 |
PIO FEDERICO |
分类号 |
H01L45/00;G11C5/06;H01L21/02 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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