| 摘要 |
The present invention provides a semiconductor device in which the threshold voltage of NMOS and the threshold voltage of PMOS are independently controllable, and a method for fabricating the same. The method includes: forming a gate insulating film over an NMOS region and a PMOS region of a semiconductor substrate; forming a carbon-containing tungsten over the gate insulating film formed over one of the NMOS region and the PMOS region; forming a carbon-containing tungsten nitride over the gate insulating film formed over the other one of the PMOS region or the NMOS region; forming a tungsten film over the carbon-containing tungsten and the carbon-containing tungsten nitride; post-annealing the carbon-containing tungsten and the carbon-containing tungsten nitride; and etching the tungsten film, the carbon-containing tungsten, and the carbon-containing tungsten nitride, to form a gate electrode in the NMOS region and the PMOS region |
