发明名称 ERROR SCANNING IN FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To provide methods, apparatus, and systems to detect potential errors in information in a flash memory device.SOLUTION: This invention includes methods, apparatus, and systems to scan at least a portion of a memory device (350), when a condition for scanning is met (340). The condition for scanning may be dependent on one or more of a number of read operations, a number of write operations, time, and others (310). Other embodiments including additional methods, apparatus, and systems are disclosed.
申请公布号 JP2014041644(A) 申请公布日期 2014.03.06
申请号 JP20130216759 申请日期 2013.10.17
申请人 MICRON TECHNOLOGY INC 发明人 WILLIAM HENRY RADKE;PETER SEAN FEELEY;SIAMACK NEMAZIE
分类号 G06F12/16 主分类号 G06F12/16
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