| 摘要 |
This technology relates to a semiconductor device and a method of manufacturing the same. A semiconductor device may include a line layer formed over a substrate, and connection structures each configured to include a first metal layer pattern, a barrier layer pattern, and a second metal layer pattern sequentially stacked over the line layer, for bonding another substrate to the substrate. In accordance with this technology, abnormal silicidation may be prevented because the barrier layer is formed at the bonding interface of the substrates, and the bonding energy of the substrates may be improved by titanium (Ti)-silicon (Si) bonding. |
