HIGH PERFORMANCE THIN FILM TRANSISTOR

摘要

A transistor includes a substrate; a gate including a first electrically conductive layer stack on the substrate; and a first inorganic thin film dielectric layer on the substrate with the first inorganic thin film dielectric layer having a first pattern. A second inorganic thin film dielectric layer, having a second pattern, is in contact with the first inorganic thin film dielectric layer. The first inorganic thin film dielectric layer and the second thin film dielectric layer have the same material composition. A third inorganic thin film dielectric layer has a third pattern. A semiconductor layer is in contact with and has the same pattern as the third inorganic thin film dielectric material layer. A source/drain includes a second electrically conductive layer stack.