SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SAME

摘要

Provided is a semiconductor device in which abnormal growth is inhibited and which is equipped with a gate electrode which can be machined despite being miniaturized. Also provided is a semiconductor device which can be miniaturized without causing deterioration in device properties. A semiconductor device provided with: a semiconductor substrate; a gate insulating film disposed on the semiconductor substrate; a gate electrode having, on the gate insulating film in the following order, a metal layer, a metal oxide layer, and a silicon layer containing impurities; and a transistor having the gate insulating film and the gate electrode.