METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL AND SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a SiC single crystal having a high wafer in-plane yield and a high yield of the wafer and a SiC single crystal obtained by such method.SOLUTION: From an initial stage to a middle stage of growth, a single crystal is grown on a surface of a seed crystal facilitating the growth of a facet region while suppressing the expansion of the facet region (first growing step). In a later stage of growth, the single crystal is further grown facilitating the growth of a non-facet region so that the growth height is uniformed (second growth step). The growth rate is regulated by making a temperature distribution and/or a concentration distribution of a raw material gas nonuniform in the first growth step and by inverting or uniformizing the temperature distribution and/or the concentration distribution of a raw material gas in the second growth step.