发明名称 SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF
摘要 A transistor a gate of which, one of a source and a drain of which, and the other are electrically connected to a selection signal line, an output signal line, and a reference signal line, respectively and a photodiode one of an anode and a cathode of which and the other are electrically connected to a reset signal line and a back gate of the transistor, respectively are included. The photodiode is forward biased to initialize the back-gate potential of the transistor, the back-gate potential is changed by current of the inversely-biased photodiode flowing in an inverse direction in accordance with the light intensity, and the transistor is turned on to change the potential of the output signal line, so that a signal in accordance with the intensity is obtained.
申请公布号 US2014061739(A1) 申请公布日期 2014.03.06
申请号 US201314074034 申请日期 2013.11.07
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUROKAWA YOSHIYUKI
分类号 H01L27/146 主分类号 H01L27/146
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