发明名称 |
FINFET WITH SELF-ALIGNED PUNCHTHROUGH STOPPER |
摘要 |
A finFET with self-aligned punchthrough stopper and methods of manufacture are disclosed. The method includes forming spacers on sidewalls of a gate structure and fin structures of a finFET device. The method further includes forming a punchthrough stopper on exposed sidewalls of the fin structures, below the spacers. The method further includes diffusing dopants from the punchthrough stopper into the fin structures. The method further includes forming source and drain regions adjacent to the gate structure and fin structures. |
申请公布号 |
US2014061794(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213598080 |
申请日期 |
2012.08.29 |
申请人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHENG KANGGUO;HARAN BALASUBRAMANIAN S.;PONOTH SHOM;STANDAERT THEODORUS E.;YAMASHITA TENKO |
分类号 |
H01L27/12;H01L21/84 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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