发明名称 |
ARRAYS OF VERTICALLY-ORIENTED TRANSISTORS, AND MEMORY ARRAYS INCLUDING VERTICALLY-ORIENTED TRANSISTORS |
摘要 |
<p>An array includes vertically-oriented transistors. The array includes rows of access lines and columns of data/sense lines. Individual of the rows include an access line interconnecting transistors in that row. Individual of the columns include a data/sense line interconnecting transistors in that column. The array includes a plurality of conductive lines which individually extend longitudinally parallel and laterally between immediately adjacent of the data/sense lines. Additional embodiments are disclosed.</p> |
申请公布号 |
WO2014035568(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
WO2013US51662 |
申请日期 |
2013.07.23 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
KARDA, KAMAL, M.;SURTHI, SHYAM;MUELLER, WOLFGANG;TANG, SANH, D. |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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