| 摘要 |
<p>According to the present invention, a semiconductor device having superior electrical conductivity is provided. The semiconductor device (10) of the present invention is provided with a base material (2), a semiconductor element (3), and an adhesive layer (1) that adheres the base material and the semiconductor element while interposed there between. In the adhesive layer (1) of the semiconductor device (10), a metal particle and an insulating particle are dispersed, and the metal particle has flaked shape or ellipsoidal/spherical shape. As the content percentage by volume of the metal particle in the adhesive layer is a and the content percentage by volume of the insulating particles in the adhesive layer is b, the content percentage (a+b) by volume of fillers in the adhesive layer is 0.20 or more and 0.50 or less and the content percentage a/(a+b) by volume of the metal particles in the fillers is 0.03 or more and 0.70 or less.</p> |
