| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an ESD protection diode that has large ESD resistance and small ineffective area.SOLUTION: A semiconductor device 60 includes a semiconductor region 50 provided on a semiconductor substrate 5 via an insulating film 17 and in which a diode is formed, and first and second electrodes 20 and 21 connected to the semiconductor region. The semiconductor region is provided in a band form so that its long sides extend along the outer periphery of the semiconductor substrate. The PN junction of the diode extends along the long sides of the semiconductor region and is exposed on an end surface along short sides of the semiconductor region. The first and second electrodes are provided spaced apart from the end surface from which the PN junction is exposed. |
