| 发明名称 |
Memory Device with Charge Trap |
| 摘要 |
A memory cell system is provided forming a first insulator layer over a semiconductor substrate, forming a charge trap layer over the first insulator layer, forming an intermediate layer over the charge trap layer, and forming a second insulator layer with the intermediate layer. |
| 申请公布号 |
US2014061771(A1) |
申请公布日期 |
2014.03.06 |
| 申请号 |
US201314076415 |
申请日期 |
2013.11.11 |
| 申请人 |
SPANSION, LLC.;ADVANCED MICRO DEVICES, INC. |
发明人 |
DING MENG;JOSHI AMOL RAMESH;XUE LEI;ORIMOTO TAKASHI;CHANG KUO-TUNG |
| 分类号 |
H01L27/115;H01L29/792 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
