发明名称 METHODS OF TREATING A SEMICONDUCTOR LAYER
摘要 Methods for treating a semiconductor layer including a semiconductor material are presented. A method includes contacting at least a portion of the semiconductor material with a passivating agent. The method further includes forming a first region in the semiconductor layer by introducing a dopant into the semiconductor material; and forming a chalcogen-rich region. The method further includes forming a second region in the semiconductor layer, the second region including a dopant, wherein an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region. Photovoltaic devices are also presented.
申请公布号 US2014065763(A1) 申请公布日期 2014.03.06
申请号 US201213601110 申请日期 2012.08.31
申请人 FOUST DONALD FRANKLIN;CAO HONGBO;CLARK LAURA ANNE;GARBER ROBERT ANDREW;FELDMAN-PEABODY SCOTT DANIEL;METZGER WYATT KEITH;SHAN YINGHUI;SHUBA ROMAN;GENERAL ELECTRIC COMPANY 发明人 FOUST DONALD FRANKLIN;CAO HONGBO;CLARK LAURA ANNE;GARBER ROBERT ANDREW;FELDMAN-PEABODY SCOTT DANIEL;METZGER WYATT KEITH;SHAN YINGHUI;SHUBA ROMAN
分类号 H01L31/18 主分类号 H01L31/18
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