发明名称 APPARATUS AND METHOD FOR PRODUCING SILICON
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for producing silicon, each of which has such expandability that polycrystalline silicon can be produced at a low cost in high yield and can also be recovered continuously and efficiently while restraining a material of a member having a silicon deposition surface from being mixed therein.SOLUTION: While keeping the temperature of a portion of a reactor 10 within a silicon deposition temperature range by a heater 22, silicon tetrachloride gas is supplied into the reactor through a silicon tetrachloride gas supply port 16a and zinc gas is supplied into the reactor through a zinc gas supply port 18a so that the supplied silicon tetrachloride is reduced by the supplied zinc in the reactor and a silicon deposition zone S, where silicon is deposited, is formed on the wall part corresponding to the portion, the temperature of which is kept within the silicon deposition temperature range, of the reactor. After that, a bar member 24b of a peeling mechanism 24 is moved while being abutted on the silicon deposited in the silicon deposition zone to peel off the silicon deposited in the silicon deposition zone.
申请公布号 JP2014040330(A) 申请公布日期 2014.03.06
申请号 JP20100286130 申请日期 2010.12.22
申请人 ASAHI GLASS CO LTD;KINOTECH SOLAR ENERGY CORP 发明人 NAKAHARA KATSUMASA;KONDO MASAFUMI;TAKEUCHI YOSHINORI;SAKAKI DAISUKE
分类号 C01B33/033 主分类号 C01B33/033
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