| 摘要 |
Disclosed is a method for preparing an independent bigrid FinFET on bulk silicon, comprising: forming a source and a drain and a thin strip-shaped graphic structure connecting the source and the drain; forming an oxide isolating layer; forming a gate structure and a source and drain structure; and forming metal contacts and metal connections. With the method, the independent bigrid FinFET can be easily formed on bulk silicon, the entire technological process is completely compatible with the conventional silicon-based super-large-scale integrated circuit manufacturing technology and has the characteristics of simplicity, convenience and short period, and the cost of silicon wafers is greatly economized. Moreover, because the independent bigrid FinFET prepared by the method is adopted, the short-channel effect can be well inhibited, and the power consumption of the device is further reduced by using the peculiar multi-threshold characteristic of the independent bigrid device. |
