发明名称 ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS
摘要 An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology.
申请公布号 US2014065791(A1) 申请公布日期 2014.03.06
申请号 US201314073526 申请日期 2013.11.06
申请人 AGERE SYSTEMS, INC. 发明人 BALOCCHI FRANK A.;CARGO JAMES T.;DELUCCA JAMES M.;DUTT BARRY J.;MARTIN CHARLES
分类号 H01L49/02 主分类号 H01L49/02
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