发明名称 |
ALLOTROPIC OR MORPHOLOGIC CHANGE IN SILICON INDUCED BY ELECTROMAGNETIC RADIATION FOR RESISTANCE TURNING OF INTEGRATED CIRCUITS |
摘要 |
An electronic device includes a semiconductor substrate and a dielectric layer over the substrate. A resistive link located over the substrate includes a first resistive region and a second resistive region. The first resistive region has a first resistivity and a first morphology. The second resistive region has a second resistivity and a different second morphology. |
申请公布号 |
US2014065791(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201314073526 |
申请日期 |
2013.11.06 |
申请人 |
AGERE SYSTEMS, INC. |
发明人 |
BALOCCHI FRANK A.;CARGO JAMES T.;DELUCCA JAMES M.;DUTT BARRY J.;MARTIN CHARLES |
分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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