| 发明名称 |
METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE |
| 摘要 |
Bulk single crystals of AlN having a diameter greater than about 25 mm and dislocation densities of about 10,000 cm-2 or less and high-quality AlN substrates having surfaces of any desired crystallographic orientation fabricated from these bulk crystals. |
| 申请公布号 |
US2014061666(A1) |
申请公布日期 |
2014.03.06 |
| 申请号 |
US201313974710 |
申请日期 |
2013.08.23 |
| 申请人 |
SCHOWALTER LEO;SLACK GLEN A.;ROJO JUAN CARLOS;BONDOKOV ROBERT T.;MORGAN KENNETH E.;SMART JOSEPH A. |
发明人 |
SCHOWALTER LEO;SLACK GLEN A.;ROJO JUAN CARLOS;BONDOKOV ROBERT T.;MORGAN KENNETH E.;SMART JOSEPH A. |
| 分类号 |
H01L29/06;C30B11/00;H01L29/04;H01L29/20;H01L33/00;H01L33/02 |
主分类号 |
H01L29/06 |
| 代理机构 |
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代理人 |
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