发明名称 |
SAPPHIRE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME AND NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT |
摘要 |
[Technical Problem] A sapphire substrate and a method for manufacturing the same are provided, which enables growth of a nitride semiconductor having excellent crystallinity and can achieve a nitride semiconductor light emitting element having excellent light extraction efficiency. [Solution to Problem] A sapphire substrate provided with a plurality of projections on a principal surface on which a nitride semiconductor is grown to form a nitride semiconductor light emitting element, wherein the projection is substantially pyramidal-shaped having a pointed top and constituted by a plurality of side surfaces, wherein the side surface has an inclined angle of between 53� and 59� from a bottom surface of the projection, and wherein the side surface is crystal-growth-suppressed surface on which growth of nitride semiconductor is suppressed relative to the substrate surface located between the adjacent projections. |
申请公布号 |
US2014061661(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201313804453 |
申请日期 |
2013.03.14 |
申请人 |
SAKO NAOYA;OHARA TAKASHI;INOUE YOSHIKI;SHIBUTANI YUKI;KAWAUCHI YOSHIHITO;TAKEICHI KAZUYUKI;NAGAHAMA YASUNORI |
发明人 |
SAKO NAOYA;OHARA TAKASHI;INOUE YOSHIKI;SHIBUTANI YUKI;KAWAUCHI YOSHIHITO;TAKEICHI KAZUYUKI;NAGAHAMA YASUNORI |
分类号 |
H01L33/32;H01L21/308 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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