| 摘要 |
According to one embodiment, a trench formation method uses a plasma source to make a trench in a silicon substrate by alternately repeating a depositing step and an etching step. The method includes implementing the depositing step and the etching step to satisfy the formulas recited below, where a distance between the silicon substrate and a region where plasma is to be confined is x (mm), an RF power to induce the plasma is w (kW), a pressure of the depositing step is y (Pa), and a tolerable limit of fluctuation in a plane of the silicon substrate of a width of the trench to be made is z0 (mum). 2.8w2+0.018y2-0.42wy-12w+0.91y+14@z0 -0.010x+0.039y+0.37@z0 0.00066x2+0.0064y2+0.52w2-0.018xy+0.037xw+0.0044yw-0.12x-0.048y-3.7w+6.6@z0 |
