| 摘要 |
A method for patterning a substrate (1 30, 310, 410, 606) is described. The method includes forming a layer of radiation-sensitive material (120, 320, 420, 616) on a substrate (110, 310, 410, 606), and preparing a pattern (122, 321, 422, 612) in the layer of radiation-sensitive material (120, 320, 420, 616) using a lithographic process, wherein the pattern (122, 321, 422, 612) is characterized by a critical dimension (CD) (124, 325, 618) and a roughness (125, 424, 649). Following the preparation of the pattern (122, 321, 422, 612) in the layer of radiation-sensitive material (120, 320, 420, 616), the method further includes performing a CD slimming process to reduce the CD (124, 325, 618) to a reduced CD (134, 326, 335, 648), and performing a vapor smoothing process to reduce the roughness (125, 424, 649) to a reduced roughness (135, 425, 669). |
