| 摘要 |
PROBLEM TO BE SOLVED: To prevent fluctuation of resistance values of resistance elements which results from an electric potential difference between a semiconductor substrate and the resistance elements and inhibit variations in the resistance values of the resistance elements without increasing the occupied area.SOLUTION: An n well 11 is provided at a surface layer part of a semiconductor substrate 10. A first resistance element 21 and a second resistance element 22, which have rectangle shapes, are provided on the n well 11 through an insulation film 13. The first and second resistance elements 21, 22 are disposed so that their long sides face each other. First wiring 31 is electrically connected with one end of the first resistance element 21. Second wiring 32 is electrically connected with one end of the second resistance element 22. Third wiring electrically connects the other end of the first resistance element 21 with the other end of the second resistance element 22. The n well 11 is electrically connected with any of the first to third wiring 31, 32, and 33. |
