发明名称 APPARATUS FOR PROCESSING SEMICONDUCTOR AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide an apparatus for processing semiconductor suppressing contamination in a processing chamber due to scattering of peeled thin films, thereby capable of improving a recovery rate of the thin films, and a method for manufacturing a semiconductor device using the apparatus for processing semiconductor.SOLUTION: An apparatus for processing semiconductor for processing a surface of a substrate. The apparatus includes: a nozzle 1 discharging a chemical solution for jetting, on the surface of the substrate; and a shower nozzle 2 disposed on the outer periphery of the nozzle 1, surrounding the vicinity of the chemical solution for jetting discharged from the nozzle 1, and discharging a shower liquid so as to form a liquid film reaching up to the surface of the substrate.
申请公布号 JP2014041916(A) 申请公布日期 2014.03.06
申请号 JP20120183308 申请日期 2012.08.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 OGATA KENICHI
分类号 H01L21/306;H01L21/304 主分类号 H01L21/306
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