发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that since resin containing a hard silica system filler or the like vigorously flows to a gate part communicating with a cavity part in a mold die, and the abrasion of those surfaces is easily advanced, it is thought to be valid that the gate part, that is, gate insert is constituted of materials whose hardness is higher than that of materials constituting the cavity part or the like for increasing abrasion resistance, and that since copper ion such as a copper system lead frame is diffused to a cobalt part as the binder part of a sintered body in a portion where the copper system lead frame and the gate insert are brought into contact with each other, the binder part becomes fragile, and peels in cleaning or the like.SOLUTION: In a transfer mold process in a method for manufacturing a semiconductor device, a portion where the gate insert of a mold die is brought into contact with at least a copper system lead frame is coated with a coat member film having copper diffusion preventing property.
申请公布号 JP2014041899(A) 申请公布日期 2014.03.06
申请号 JP20120183026 申请日期 2012.08.22
申请人 RENESAS ELECTRONICS CORP 发明人 KURATOMI BUNSHI;SHIMIZU FUKUMI;HARADA HARUHIKO;SAKURAI NOBORU
分类号 H01L21/56 主分类号 H01L21/56
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