| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing SiNfilm having high passivation performance by clarifying the relationship between a hydrogen gas introduction at the time of deposition of the SiNfilm and the passivation performance of the SiNfilm.SOLUTION: When a SiNfilm is deposited in contact with a SiOfilm chemically deposited on a substrate, hydrogen gas is introduced to deposit SiNfilm. |
