| 摘要 |
A disclosed Zener diode includes, in one embodiment, an anode region and a cathode region that form a shallow sub-surface latitudinal Zener junction. The Zener diode may further include an anode contact region interconnecting the anode region with a contact located away from the Zener junction region and a silicide blocking structure overlying the anode region. The Zener diode may also include one or more shallow, sub-surface longitudinal p-n junctions at the junctions between lateral edges of the cathode region and the adjacent region. The adjacent region may be a heavily doped region such as the anode contact region. In other embodiments, the Zener diode may include a breakdown voltage boost region comprising a more lightly doped region located between the cathode region and the anode contact region. |
