发明名称 |
Diode Formed of PMOSFET and Schottky Diodes |
摘要 |
A P-type Metal-Oxide-Semiconductor Field Effect Transistor (PMOSFET) includes a gate, a first source/drain region connected to the gate, and a second source/drain region on an opposite side of the gate than the first source/drain region. A first Schottky diode includes a first anode connected to the first source/drain region, and a first cathode connected to a body of the PMOSFET. A second Schottky diode includes a second anode connected to the second source/drain region, and a second cathode connected to the body of the PMOSFET. |
申请公布号 |
US2014062580(A1) |
申请公布日期 |
2014.03.06 |
申请号 |
US201213604299 |
申请日期 |
2012.09.05 |
申请人 |
LEE JAM-WEM;LIN WAN-YEN;SONG MING-HSIANG;KUO CHENG-HSIUNG;CHIH YUE-DER;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LEE JAM-WEM;LIN WAN-YEN;SONG MING-HSIANG;KUO CHENG-HSIUNG;CHIH YUE-DER |
分类号 |
G05F3/02 |
主分类号 |
G05F3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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