发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor array panel includes: a substrate including a display area and a drive region in which a driving chip for transmitting a driving signal to the pixels is located; a gate line in the display area; a storage electrode line; a gate driving pad coupled to the driving chip; a gate insulating layer; a first semiconductor layer on the gate insulating layer and overlapped with a gate electrode protruding from the gate line; a second semiconductor layer formed on the gate insulating layer and overlapped with a sustain electrode protruding from the storage electrode line; a data line crossing the gate line in an insulated manner and a drain electrode separated from the data line; and a pixel electrode coupled to the drain electrode, and the drain electrode comprises a drain bar facing the source electrode, and a drain extender overlapped with the second semiconductor layer.
申请公布号 US2014065749(A1) 申请公布日期 2014.03.06
申请号 US201314077002 申请日期 2013.11.11
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM HYUN-YOUNG;RO SUNG-IN;JEON CHEOLL-HEE
分类号 H01L27/12;H01L21/28;H01L21/283;H01L21/48 主分类号 H01L27/12
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