发明名称 Methods For Small Trench Patterning Using Chemical Amplified Photoresist Compositions
摘要 A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.
申请公布号 US2014065552(A1) 申请公布日期 2014.03.06
申请号 US201314082444 申请日期 2013.11.18
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG YA-HUI;LIU CHIA-CHU
分类号 H01L21/027 主分类号 H01L21/027
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