| 摘要 |
A nonvolatile semiconductor memory device below comprises: a memory cell array configured having memory cells arranged therein disposed at intersections of a plurality of first lines and a plurality of second lines formed so as to intersect each other, and the memory cells each comprising a variable resistance element; and a control circuit configured to select and drive the first lines and the second lines. The variable resistance element is configured by a transition metal oxide film. The variable resistance element is electrically connected to a first electrode configured from a metal at a first surface and is electrically connected to a second electrode at a second surface which is on an opposite side to the first surface. A first insulating film is formed between the first electrode and the variable resistance element. The first insulating film is formed by a first material that is formed by covalent binding. |
